Reducing Temperature Dependence of Semiconductor Lasers Using Nonidentical Multiple Quantum \Vells
نویسنده
چکیده
Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteiistics. With proper layout of the nonidentical MQWs, the characteristic temperature ofthe laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30°C to 4OUC and approximately remains at this value for temperature above 40°C. The reason is attributed to the carrier redistribution in the nonidentical MQWs as temperature increases. The change in temperatute causes certain QWs to have increased carriers. Therefore their correspQnding gain increases to overcome other effects that degracl iniperaturc charactristics. With proper design of flnidcnticai MQWs. significant improvement on temperature characteristics of semiconductor lasers is possible.
منابع مشابه
Broadband semiconductor optical amplifiers and tunable semiconductor lasers
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